Comparison of high-power IGBT's and hard-driven GTO's for high-power inverters

被引:50
作者
Bernet, S [1 ]
Teichmann, R
Zuckerberger, A
Steimer, PK
机构
[1] ABB Kraftwerke AG, Corp Res, Elect Dr Syst, D-69115 Heidelberg, Germany
[2] Tech Univ Dresden, Power Elect Dept, D-01062 Dresden, Germany
[3] ABB Ind AG, CH-5300 Turgi, Switzerland
关键词
hard-driven gate-turn-off thyristor; insulated gate bipolar transistor; losses; pulsewidth modulation inverter;
D O I
10.1109/28.753645
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper compares hard-driven gate-turn-off thyristors (IGCT's) and high-power insulated gate bipolar transistor (IGBT) modules in a two-level pulsewidth modulation inverter, The structure, fundamental operation, and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCT's and IGBT's in a 1.14-MVA inverter at switching frequencies of f(s) = 250 Hz/500 Hz. The evaluation of device characteristics is the basis for a derivation of potential applications.
引用
收藏
页码:487 / 495
页数:9
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