Comparison of high-power IGBT's and hard-driven GTO's for high-power inverters

被引：50

作者：

Bernet, S ^{[1
]}

Teichmann, R

Zuckerberger, A

Steimer, PK

机构：

[1] ABB Kraftwerke AG, Corp Res, Elect Dr Syst, D-69115 Heidelberg, Germany

[2] Tech Univ Dresden, Power Elect Dept, D-01062 Dresden, Germany

[3] ABB Ind AG, CH-5300 Turgi, Switzerland

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1999年 / 35卷 / 02期

关键词：

hard-driven gate-turn-off thyristor; insulated gate bipolar transistor; losses; pulsewidth modulation inverter;

D O I：

10.1109/28.753645

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper compares hard-driven gate-turn-off thyristors (IGCT's) and high-power insulated gate bipolar transistor (IGBT) modules in a two-level pulsewidth modulation inverter, The structure, fundamental operation, and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCT's and IGBT's in a 1.14-MVA inverter at switching frequencies of f(s) = 250 Hz/500 Hz. The evaluation of device characteristics is the basis for a derivation of potential applications.

引用

页码：487 / 495

页数：9

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