Accessing OLED emitter properties by radiation pattern analyses

被引:33
作者
Flaemmich, Michael [1 ]
Michaelis, Dirk [1 ]
Danz, Norbert [1 ]
机构
[1] Fraunhofer Inst Appl Opt & Precis Engn IOF, D-07745 Jena, Germany
关键词
Organic light-emitting diode; Optical simulation; In situ characterization; Internal spectrum; Emission zone; Dipole emitter orientation; OPTICAL-CONSTANTS; EMISSION PROFILE; LIGHT-EMISSION;
D O I
10.1016/j.orgel.2010.09.019
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical features of the internal dipole radiation have major impact on the emission pattern and overall device efficiency of organic light-emitting diodes (OLEDs). We provide some general directives on how the OLED layered stack should be designed in order to enable precise measurements of the active optical properties of the emissive material (namely internal electroluminescence spectrum, profile of the emission zone and dipole moment orientation) by radiation pattern analyses. We discuss a model layered system and deduce universal emitter positions most suitable for the determination of the particular OLED internal features of interest. Furthermore, we evaluate the real benefit of conducting radiation pattern analyses utilizing a substrate index-matched glass-hemisphere. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码:83 / 91
页数:9
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