Oxide ion conductivity in doped Ga based perovskite type oxide

被引：94

作者：

Ishihara, T

Matsuda, H

binBustam, MA

Takita, Y

机构：

[1] Department of Applied Chemistry, Faculty of Engineering, Oita University, Oita 870-11

来源：

SOLID STATE IONICS | 1996年 / 86-8卷 / pt 1期

关键词：

oxide ion conductor; gallium; perovskite type structure;

D O I：

10.1016/0167-2738(96)00122-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Oxide ion conductivity of Ga based perovskite type oxides, LnGaO(3) (Ln = Nd, La) and its related oxide, A(3)Ga(2)O(6) (A = Ba and St) was investigated. Oxide ion transference number is almost 1.0 on Sr3Ga2O6 or Ba3Ga2O6. However, electrical conductivity of these A(3)Ga(2)O(6) system oxides was lower than log (sigma/S cm(-1)) = -3 due to the low solubility of the aliovalent cations. On the other hand, doped perovskite type oxide of NdGaO3 and LaGaO3 exhibited a high electrical conductivity and the transference number of oxide ion was higher than 0.9 in the oxygen partial pressure range from P-O2 = 1 to 10(-21) atm. In particular, Ca and Mg doped NdGaO, exhibited a high oxide ion conductivity in similar with LaGaO3 based oxide.

引用

页码：197 / 201

页数：5

共 6 条

[1]

[Anonymous], CHEM SENS T

[2]

CHOUDHARY CB, 1980, SOLID ELECT THEIR AP, P35

[3] DOPED LAGAO3 PEROVSKITE-TYPE OXIDE AS A NEW OXIDE IONIC CONDUCTOR [J].