Electronic state of nanodiamond/graphite interfaces

被引：8

作者：

Okotrub, AV

Bulusheva, LG

Kuznetsov, VL

Gusel'nikov, AV

Chuvilin, AL

机构：

[1] Nikolaev Inst Inorgan Chem SB RAS, Novosibirsk 630090, Russia

[2] Boreskov Inst Catalysis SB RAS, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 02期

关键词：

D O I：

10.1007/s00339-004-2565-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic state of nanodiamond/graphite interfaces in samples prepared by annealing of nanodiamonds (ND) at 1150-1600 K has been probed using X-ray fluorescence spectroscopy and field-emission measurements. Comparison between C K-alpha spectra of ND before and after annealing revealed an enhancement of density of high-energy occupied states in the products. A quantum-chemical calculation using a carbon model showed that the observed states could originate from the electrons of dangling bonds produced by peeling of a graphitic shell from the (111) surface of a diamond particle. The developed graphitic layers screen the weakly bonding electrons, which results in a lowering of the efficiency of field-electron emission from the samples with an increase of annealing temperature.

引用

页码：393 / 398

页数：6

共 25 条

[1]

Bulusheva L, 2002, MATER RES SOC SYMP P, V703, P381

[2] Kinetics of the graphitization of dispersed diamonds at "low" temperatures [J].