AlGaInAs/InP ridge-guide lasers operating at 1.55μm

被引：2

作者：

Evans, GA ^{[1
]}

Sih, JP ^{[1
]}

Chou, TM ^{[1
]}

Kirk, JB ^{[1
]}

Butler, JK ^{[1
]}

Pang, L ^{[1
]}

机构：

[1] So Methodist Univ, Dept Elect Engn, Dallas, TX 75275 USA

来源：

IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷

关键词：

semiconductor lasers; quantum well lasers; III-V materials/devices;

D O I：

10.1117/12.304443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The AlGaInAs material system has two important advantages over InGaAsP. One advantage is a larger conduction band offset(1,2) than that in InGaAsP (72% of the offset is in the conduction band compared to about 40% for InGaAsP). This increased conduction band offset is the major reason for the improved temperature performance of these devices. A second-advantage is the larger differential gain in the AlGaInAs devices which results in higher modulation rates.

引用

页码：205 / 210

页数：6