Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy

被引：27

作者：

Beresford, R ^{[1
]}

Stevens, KS ^{[1
]}

Schwartzman, AF ^{[1
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.590003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of growths conducted at different substrate temperatures and V:III ratios is analyzed by x-ray diffraction to determine composition. A metastable InAsN alloy plus pure InAs are obtained for temperatures in the range 450-500 degrees C and total V:III ratio of approximately unity. The InAs fraction in the alloy phase increases at lower temperatures, the maximum observed is 13%. For higher temperatures or higher V:III ratio only separated phases of InAs and InN are found. (C) 1998 American Vacuum Society.

引用

页码：1293 / 1296

页数：4

共 6 条

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