Laser induced vaporization mass spectrometric studies on Si3N4

被引：10

作者：

Joseph, M ^{[1
]}

Sivakumar, N ^{[1
]}

Manoravi, P ^{[1
]}

机构：

[1] Indira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, India

来源：

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY | 1998年 / 176卷 / 03期

关键词：

laser vaporization; time reserved mass spectrometry; Si3N4;

D O I：

10.1016/S1387-3806(98)14016-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

An Si3N4 sample was irradiated with an Nd-YAG laser. The species present in the plume were detected by a quadrupole mass spectrometer (QMS). The species observed were Si, SiN, Si-2, Si2N, Si-3, Si3N, Si-4, Si3N4, Si-6, Si-7, and N. Weak signals were observed at m/e = 126 and 280. The analysis of the velocity of the different species indicates the existence of thermal equilibrium in the vaporization process. (C) 1998 Elsevier Science B.V.

引用

页码：237 / 244

页数：8

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