Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light

被引：5

作者：

Dragomir, A ^{[1
]}

Nikogosyan, DN

Brambilla, G

机构：

[1] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland

[2] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 20期

关键词：

D O I：

10.1049/el:20030942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An enhanced photosensitivity was observed in 30 mol% Ge-doped fibre and 30 mol% Ge-doped, 1 mol% Sn-codoped fibre when exposed to high-intensity (73-86 GW/cm(2)) femtosecond laser pulses at 264 nm.

引用

页码：1437 / 1439

页数：3

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