Nonlinear transmission lines for pulse shaping in silicon

被引:162
作者
Afshari, E [1 ]
Hajimiri, A [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
基金
美国国家科学基金会;
关键词
accumulation-mode varactors; edge sharpening; nonlinear effects; nonlinear transmission lines; pulse shaping; solitons; transmission lines;
D O I
10.1109/JSSC.2005.843639
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nonlinear transmission lines (NLTL) are used for pulse shaping. We developed the theory of pulse propagation through the NLTL. The problem of a wide pulse degenerating into multiple pulses rather than a single pulse is solved by using a gradually scaled NLTL. We exploit certain favorable properties of accumulation-mode MOS varactors to design an NLTL that can simultaneously sharpen both rising and falling edges. There is a good agreement among the theory, simulations, and measurements.
引用
收藏
页码:744 / 752
页数:9
相关论文
共 17 条
[1]  
ABLAWITZ MJ, 1981, SOLITONS INVERSE SCA
[2]  
AFSHARI E, UNPUB SIAM J APPL MA
[3]  
*AG, ADV DES SYST US GUID
[4]   TABLE OF SOLUTIONS OF ONE-DIMENSIONAL BURGERS EQUATION [J].
BENTON, ER ;
PLATZMAN, GW .
QUARTERLY OF APPLIED MATHEMATICS, 1972, 30 (02) :195-&
[5]  
Bullough R.K., 1980, SOLITONS
[6]  
CASE MG, 1993, THESIS U CALIFORNIA
[7]  
Drazin P.G., 1989, SOLITONS INTRO
[8]  
INFELD E, 1990, NONLINEAR WAVES SOLI
[9]   Study of the current-voltage characteristics in MOS capacitors with Si-implanted gate oxide [J].
Kameda, E ;
Matsuda, T ;
Emura, Y ;
Ohzone, T .
SOLID-STATE ELECTRONICS, 1999, 43 (03) :555-563
[10]   A new model of gate capacitance as a simple tool to extract MOS parameters [J].
Larcher, L ;
Pavan, P ;
Pellizzer, F ;
Ghidini, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) :935-945