Analysis of the conductance transient in thick-film tin oxide gas sensors

被引:62
作者
Vilanova, X
Llobet, E
Alcubilla, R
Sueiras, JE
Correig, X
机构
[1] UNIV POLITECN CATALUNYA,DEPT ELECT ENGN,BARCELONA 08034,SPAIN
[2] UNIV ROVIRA & VIRGILI,DEPT ENGN QUIM,TARRAGONA 43006,SPAIN
关键词
tin oxide; thick films; conductance transient; diffusion-reaction model; porosity;
D O I
10.1016/0925-4005(96)80063-3
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this paper, we analyse the conductance transient of a Taguchi TGS-822 sensor under a step change in the vapour concentration. A diffusion-limited range in the conductance transient is observed. Adjustments between the theoretical calculations based on a non-linear diffusion-reaction model and the experimental results allow a constant, tau', to be estimated, which is independent of the final conductance value and depends, among other parameters, on the effective diffusion coefficient of vapours in the porous tin oxide sensor. From transient measurements of organic solvents (benzene and o-xylene) we have obtained tau' values that are independent of concentration and characteristic for each vapour. This new parameter can give useful information for gas/vapour recognition.
引用
收藏
页码:175 / 180
页数:6
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