High current density self-field effects and low-frequency noise in NiFe/Ag GMR multilayers

被引：3

作者：

Kirschenbaum, LS ^{[1
]}

Rogers, CT ^{[1
]}

Beale, PD ^{[1
]}

Russek, SE ^{[1
]}

Sanders, SC ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

关键词：

D O I：

10.1109/20.539118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High current densities (10(6)-10(7) A/cm(2)) produce magnetic fields which can induce antiparallel magnetic alignment in large (16 mu m and 8 mu m) NiFe/Ag thin film multilayer devices. We induce GMR in unannealed devices which normally do not display GMR. We find multiple peaks in the magnetoresistance curves of annealed and unannealed devices. Analysis of the positions and shapes of these magnetoresistance peaks provides a new set of tools for determining the micromagnetic structure of the multilayers. Our magneto-optical Kerr effect data and low frequency noise data correlate with the magnetoresistance peaks and may yield further information about layer-layer interactions and domain structure.

引用

页码：4684 / 4686

页数：3

共 6 条

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