InP-based devices and integrated circuits for millimeter-wave sensor and communication systems

被引：1

作者：

Dickmann, J ^{[1
]}

Berg, M ^{[1
]}

机构：

[1] Daimler Benz AG, Res Ctr Ulm, D-89081 Ulm, Germany

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP-based MMICs demonstrate clear advantages in comparison to the GaAs-based devices and circuits. They clearly exhibit lower noise and higher gain per stage. For converter and oscillator applications they deliver at least identical performance but at much lower power consumption in comparison to GaAs circuits and will extend the operation frequency to higher values. InP HFET based MMICs will improve the performance of communication and sensor systems operating in the 60 GHz to 94 GHz region and will open the use of 140 GHz for high resolution radar systems. InP-based HBT circuits will push the transition from analog to digital systems further into the higher GHz region enabling the realization of new receiver systems with a high degree of flexibility in signal processing.

引用

页码：411 / 414

页数：4