16-pixel linear array of near-infrared photodetectors in polycrystalline Ge on Si

被引：3

作者：

Colace, L ^{[1
]}

Masini, G ^{[1
]}

Galluzzi, F ^{[1
]}

Assanto, G ^{[1
]}

机构：

[1] Terza Univ Rome, Dept Elect Engn, I-00146 Rome, Italy

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 20期

关键词：

D O I：

10.1049/el:19981361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel one-dimensional array of photodetectors for the near infrared up to 1.55 mu m is reported. The device is based on polycrystalline Ge thermally evaporated on silicon, and consists of 16 pixels at a 100 mu m pitch. A responsivity of 16 mA/W was measured at 1.3 mu m with nanosecond response time.

引用

页码：1968 / 1969

页数：2

共 5 条

[1]

*CCD PROD, 1995, THOMS CSF SEM SPEC

[2] Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si [J].