Electronic stopping power of aluminum crystal

被引:43
作者
Campillo, I
Pitarke, JM
Eguiluz, AG
机构
[1] Euskal Herriko Unibertsitatea, Mat Kondentsatuaren Fisika Saila, Zientzi Fakultatea, Bilbao 48080, Basque Country, Spain
[2] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
[3] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.58.10307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ab initio calculations of the electronic energy loss of ions moving in aluminum crystal are presented, within linear-response theory, from a realistic description of the one-electron band structure and a full treatment of the dynamical electronic response of valence electrons. For the evaluation of the density-response function we use the random-phase approximation and, also, a time-dependent extension of local-density-functional theory. We evaluate both position-dependent and random stopping powers, for a wide range of projectile velocities. Our results indicate that at low velocities band-structure effects slightly enhance the stopping power. Al velocities just above the threshold velocity for plasmon excitation, the stopping power of the real solid is found to be smaller than that of jellium electrons, corrections being of about 10%. This reduction can be understood from sum rule arguments. [S0163-1829(98)08339-8].
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页码:10307 / 10314
页数:8
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