Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy

被引：323

作者：

Okamoto, K ^{[1
]}

Niki, I

Scherer, A

Narukawa, Y

Mukai, T

Kawakami, Y

机构：

[1] CALTECH, Dept Elect Engn & Phys, Pasadena, CA 91125 USA

[2] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

[3] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.2010602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes. (C) 2005 American Institute of Physics.

引用

页数：3

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