Design optimization of an active resonant snubber for high power IGBT converters

被引：8

作者：

Combrink, FW ^{[1
]}

Mouton, HD

Enslin, JHR

Akagi, H

机构：

[1] Siemens Ltd, Ind Serv & Solut Dept, Johannesburg, South Africa

[2] Univ Stellenbosch, Dept Elect & Elect Engn, ZA-7602 Matieland, South Africa

[3] Kema, Raleigh, NC 27607 USA

[4] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 152, Japan

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2006年 / 21卷 / 01期

关键词：

active resonant snubber topology; insulated gate bipolar transistor (IGBT);

D O I：

10.1109/TPEL.2005.861199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design optimization procedure for a new active resonant snubber topology, specifically suited for high power insulated gate bipolar transistor (IGBT) converters, is introduced. After the basic operation principles and certain implementation consideration are discussed, the optimization strategy, based on an analytical loss evaluation, is described. Experimental results obtained on an IGBT phase-arm fitted with an optimally designed snubber are presented.

引用

页码：114 / 123

页数：10

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