Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001)

被引：210

作者：

Bowen, M

Cros, V

Petroff, F

Fert, A

Boubeta, CM

Costa-Krämer, JL

Anguita, JV

Cebollada, A

Briones, F

de Teresa, JM

Morellón, L

Ibarra, MR

Güell, F

Peiró, F

Cornet, A

机构：

[1] Unite Mixte Phys CNRS THALES, F-91404 Orsay, France

[2] Univ Paris 11, F-91405 Orsay, France

[3] CSIC, Ctr Nacl Microelect, IMM, Isaac Newton PTM8, Madrid 28760, Spain

[4] Univ Zaragoza, Fac Ciencias, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain

[5] Univ Barcelona, Fac Fis, E-08028 Barcelona, Spain

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 11期

关键词：

D O I：

10.1063/1.1404125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present tunneling experiments on Fe(001)/MgO(20 Angstrom)/FeCo(001) single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on (001)-oriented Fe/amorphous-Al2O3/FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface-Fe(001) in this case-but depends on the actual electronic structure of the entire electrode/barrier system. (C) 2001 American Institute of Physics.

引用

页码：1655 / 1657

页数：3

共 20 条

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