High-frequency modulation characteristics of red VCSELs

被引：22

作者：

Lehman, JA ^{[1
]}

Morgan, RA ^{[1
]}

Carlson, D ^{[1
]}

Crawford, MH ^{[1
]}

Choquette, KD ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 04期

关键词：

vertical cavity surface emitting lasers; modulation; visible semiconductor lasers;

D O I：

10.1049/el:19970179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have measured small- and large-signal modulation response characteristics of a red VCSEL (lambda = 670nm). A small-signal 3dB bandwidth of 11 GHz was recorded at a bias current of 16mA. The small-signal response for each bias current was fit to an analytic model to determine the resonance and damping factor. From these data the differential gain coefficient and K-factor were estimated. Large signal digital measurements were conducted showing suitability of this device for data communication applications. An open eye diagram at the receiver output is presented with no pre-bias current applied and the VCSEL modulated at 155Mbit/s demonstrating the possibility of direct logic-level drive.

引用

页码：298 / 300

页数：3

共 6 条

[1]

COLDREN LA, 1995, DIODE LASERS PHOTONI, pCH5

[2]

HAGEROTTCRAWFOR.M, 1995, IEEE PHOTONIC TECH L, V7, P724

[3] Performance, uniformity, and yield of 850-nm VCSEL's deposited by MOVPE [J].