Fabrication of silicon and metal nanowires and dots using mechanical atomic force lithography

被引：76

作者：

Hu, S ^{[1
]}

Hamidi, A ^{[1
]}

Altmeyer, S ^{[1
]}

Koster, T ^{[1
]}

Spangenberg, B ^{[1
]}

Kurz, H ^{[1
]}

机构：

[1] Inst Semicond Elect 2, D-52074 Aachen, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.590277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

novel bilayer resist system consisting of a 3 nm thick titanium (Ti) layer on top of a 65 nm thick poly(methylmethacrylate) (PMMA) layer was developed for mechanical nanolithography with the atomic force microscope. The ultrathin Ti layer allowed 20 nm resolution patterning with conventional silicon cantilevers, provided a proper force-depth calibration was performed before lithography. Techniques of pattern transfer were applied to fabricate chromium nanostructures and silicon nanowires from the patterned Ti/PMMA resist. (C) 1998 American Vacuum Society. [S0734-211X(98)03905-5].

引用

页码：2822 / 2824

页数：3

共 21 条

[1] 77 K single electron transistors fabricated with 0.1 mu m technology [J].