Reply to "Comment on 'Molecular dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms'"

被引：3

作者：

Motooka, T ^{[1
]}

Nishihara, K

Munetoh, S

Moriguchi, K

Shintani, A

机构：

[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8128581, Japan

[2] Sumitomo Met Ind Ltd, Elect Engn Labs, Amagasaki, Hyogo 6600891, Japan

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.63.237402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated atomic diffusion properties near the amorphous/crystalline (a/c) Si(001) interface during solid-phase epitaxy (SPE) of Si based on molecular-dynamics simulations using the Tersoff potential. It has been found that the mean-square displacement of the Si atoms in an amorphous layer with a thickness of 10 Angstrom at the ale interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crystallization of amorphous Si during SPE growth.

引用

页数：2