High-resolution angle-resolved photoemission spectroscopy of CeBi

被引：29

作者：

Kumigashira, H ^{[1
]}

Yang, SH ^{[1
]}

Yokoya, T ^{[1
]}

Chainani, A ^{[1
]}

Takahashi, T ^{[1
]}

Uesawa, A ^{[1
]}

Suzuki, T ^{[1
]}

Sakai, O ^{[1
]}

Kaneta, Y ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT QUANTUM ENGN & SYST SCI,TOKYO 113,JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.54.9341

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution angle-resolved photoemission spectroscopy (HR-ARPES) has been performed on a CeBi single crystal to study the complicated electronic structure near the Fermi level (E(F)). The experimental result was compared with the band-structure calculation based on the p-f mixing model as well as the de Haas-van Alphen (dHvA) effect measurements. It was found that the overall feature of the valence band shows a remarkably good agreement between the experiment and the calculation, suggesting the essential validity of the p-f mixing model. HR-ARPES measurement near E(F) has established the existence of a small electron pocket centered at the M point in the Brillouin zone, supporting the band calculation and the dHvA measurement. HR-ARPES spectra around the Gamma point show some dispersive bands near E(F) indicative of a hole pocket centered at the Gamma point, though it was not so clearly resolved as the electron pocket due to close proximity of individual bands. These results are consistent with the semimetallic nature of CeBi. The observed quantitative discrepancy between the experiment and the calculation is discussed.

引用

页码：9341 / 9345

页数：5

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