Shot noise of single-electron tunneling in one-dimensional arrays

被引:30
作者
Matsuoka, KA [1 ]
Likharev, KK [1 ]
机构
[1] SUNY Stony Brook, Dept Phys, Stony Brook, NY 11794 USA
关键词
D O I
10.1103/PhysRevB.57.15613
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have used numerical modeling and a semianalytical calculation method to find the low-frequency value S-r(0) of the spectral density fluctuations of current through one-dimensional arrays of small tunnel junctions, using the ''orthodox'' theory of single-electron tunneling. In all three array types studied, at low temperature (k(B)T much less than eV) increasing current induces a crossover from the Schottky value S-l(0)=2e <(I) over bar > to the "reduced Schottky value" S-l(0)=2e <(I) over bar >/N (where N is the array length) at some crossover current I-c. In uniform arrays over a ground plane, I-c is proportional to exp(-lambda N/3), where lambda(-1) is the single-electron soliton length. In arrays without a ground plane, I-c decreases slowly with both N and lambda. Finally, we have calculated the statistics of I, for ensembles of arrays with random background charges. The standard deviation of I, from the ensemble average < I-c> is quite large, typically between 0.5 and 0.7 of < I-c> while the dependence of < I-c> on N or lambda is so weak that it is hidden within the random fluctuations of the crossover current.
引用
收藏
页码:15613 / 15622
页数:10
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