The 4500V-750A planar gate press pack IEGT

被引：16

作者：

Kon, H ^{[1
]}

Nakayama, K ^{[1
]}

Yanagisawa, S ^{[1
]}

Miwa, J ^{[1
]}

Uetake, Y ^{[1
]}

机构：

[1] Toshiba Corp, Semicond Syst Engn Ctr, Sakae Ku, Yokohama, Kanagawa 2478585, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the 4500V-750A planar gate IEGT (P-IEGT), which has wide cell width. Increasing gate width, the planar devices achieves the carrier injection enhancement effect. Wide gate structure shows better characteristics for high voltage planar devices than the conventional IGBT. The on-state voltage drop is 3.8V at 50A/cm(2),Tj=25 degrees C. The value is low enough for 4500V rated MOS gate transistor. We achieve turn off capability at Vce(peak)=4000V, Ic=1600A without adding dv/dt snubber at Tj=125 degrees C. The result shows that P-IEGT has very wide SOA.

引用

页码：81 / 84

页数：4