Ambient dependence of agglomeration stability of Cu/Ta films

被引：3

作者：

Hartman, JW ^{[1
]}

Atwater, HA ^{[1
]}

Hashim, I ^{[1
]}

Chin, B ^{[1
]}

Chen, F ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS | 1998年 / 514卷

关键词：

D O I：

10.1557/PROC-514-303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the effects of oxygen contamination on the agglomeration of thin Cu films fabricated by physical vapor deposition on Ta barriers. Thin Cu films on clean, ultrahigh vacuum-deposited Ta barriers were stable against agglomeration when annealed for several hours at temperatures as high as T=380 degrees C. However, on Ta barriers intentionally contaminated with oxygen, agglomeration of Cu films occurred within minutes when annealed above 300 degrees C. Time-resolved reflectivity was used to study film evolution and agglomeration in situ. Atomic force microscopy was used for post-growth characterization of agglomeration. Characterization of Ta barriers by X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry demonstrated that clean Cu films on contaminated Ta barriers containing as little as 5% oxygen were unstable against agglomeration.

引用

页码：303 / 308

页数：6