Crystal growth by micro-pulling-down of Ca3Ga2Ge4O14 (CGG) type-Sr3Nb1-xGa3 + (5/3)xSi2O14 compounds

被引：19

作者：

Jung, IH

Yoshikawa, A

Lebbou, K

Fukuda, T

Auh, KH

机构：

[1] Tohoku Univ, Fukuda Lab, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Hanyang Univ, CPRC, Seoul 133791, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 226卷 / 01期

关键词：

solid solutions; single crystal growth; oxides; piezoelectric materials;

D O I：

10.1016/S0022-0248(01)01356-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Solid solution range and congruency of Sr3Nb1-xGa3 + (5/3)NSi2O14 (SNGS) were examined by powder X-ray diffraction and differential thermal analysis (DTA), which enables the selection of a suitable starting composition for micro-pulling-down (mu -PD) growth. On the basis of these data, SNGS single crystals have been grown by the CI-PD method, where composition was determined by chemical analysis. (C) 2001 Published by Elsevier Science B.V.

引用

页码：101 / 106

页数：6

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