Lithium insertion in channel-structured β-AgVO:: In situ Raman study and computer simulation

被引:37
作者
Bao, Qiaoliang
Bao, Shujuan
Li, Chang Ming
Qi, Xiang
Pan, Chunxti [1 ]
Zang, Jianfeng
Wang, Weiliang
Tang, Ding Yuan
机构
[1] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 639798, Singapore
[3] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[4] Wuhan Univ, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China
[5] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[6] Zhongshan Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
关键词
D O I
10.1021/cm071728i
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lithium insertion is the fundamental electrochemical process of rechargeable lithium batteries. We report here in situ Raman and atomistic simulation studies of the lithium insertion process in beta-AgVO3 nanowired structure material. Key issues of the process relate to structural variations and lithium migration pathways in the beta-AgVO3. The simulation model shows good agreement with the experimental results. It indicates that the lithium insertion can be divided into three steps. The reduction sites at each step in the beta-AgVO3 lattice are confirmed: the most favorable reduction sites at higher potential are V1/V4; at medium potential, Ag2/Ag3 are reduced and substituted; after that Li+ ion reduces V2/V3/Ag4 and further reduces V1/V4. The migration pathways of Li+ ions in beta-AgVO3 are proposed for the first time. Our discovery would help us to greatly understand the deep insight of the Li+ insertion process in lithium batteries.
引用
收藏
页码:5965 / 5972
页数:8
相关论文
共 59 条
  • [1] Ammundsen B, 1999, J PHYS CHEM B, V103, P5175, DOI 10.1021/jp9843981
  • [2] Atomistic simulation studies of lithium and proton insertion in spinel lithium manganates
    Ammundsen, B
    Roziere, J
    Islam, MS
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (41): : 8156 - 8163
  • [3] A Raman study of the lithium insertion process in vanadium pentoxide thin films deposited by atomic layer deposition
    Baddour-Hadjean, R
    Golabkan, V
    Pereira-Ramos, JP
    Mantoux, A
    Lincot, D
    [J]. JOURNAL OF RAMAN SPECTROSCOPY, 2002, 33 (08) : 631 - 638
  • [4] Synthesis and electrical transport of novel channel-structured β-AgVO3
    Bao, Shu-Juan
    Bao, Qiao-Liang
    Li, Chang-Ming
    Chen, Tit Pei
    Sun, Chang-Qing
    Dong, Zhi-Li
    Gan, Ye
    Zhang, Jun
    [J]. SMALL, 2007, 3 (07) : 1174 - 1177
  • [5] Baran EJ, 1997, J RAMAN SPECTROSC, V28, P289, DOI 10.1002/(SICI)1097-4555(199704)28:4<289::AID-JRS106>3.0.CO
  • [6] 2-4
  • [7] Synthesis, crystal structure and optical properties of BiMgVO5
    Benmokhtar, S
    El Jazouli, A
    Chaminade, JP
    Gravereau, P
    Guillen, F
    de Waal, D
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 2004, 177 (11) : 4175 - 4182
  • [8] Direct XRD observation of oxidation-state changes on Li-ion insertion into transition-metal oxide hosts
    Bergström, Ö
    Björk, H
    Gustafsson, T
    Thomas, JO
    [J]. JOURNAL OF POWER SOURCES, 1999, 81 : 685 - 689
  • [9] Lithium intercalation into vanadium pentoxide: a theoretical study
    Braithwaite, JS
    Catlow, CRA
    Gale, JD
    Harding, JH
    [J]. CHEMISTRY OF MATERIALS, 1999, 11 (08) : 1990 - 1998
  • [10] Braithwaite JS, 2001, PHYS CHEM CHEM PHYS, V3, P4052