Sign reversal of spin polarization in Co/Ru/Al2O3/Co magnetic tunnel junctions -: art. no. 100406

被引：46

作者：

LeClair, P

Hoex, B

Wieldraaijer, H

Kohlhepp, JT

Swagten, HJM

de Jonge, WJM

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Eindhoven Univ Technol, COBRA, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.64.100406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Utilizing ultrathin Ru interfacial layers in Co/Al2O3/Co tunnel junctions, we demonstrate that not only does the tunnel magnetoresistance decrease strongly as the Ru thickness increases as found for Cu or Cr interlayers, in contrast, even the sign of the apparent tunneling spin polarization may be changed. Further, the magnitude and sign of the apparent polarization is strongly dependent on applied voltage. The results are explained by a strong density-of-states modification at the (interdiffused) Co/Ru interface, consistent with theoretical calculations and experiments on Co/Ru metallic multilayers and Co-Ru alloys.

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