Simulation for capacitance correction from Nyquist plot of complex impedance-voltage characteristics

被引：37

作者：

Kavasoglu, A. Sertap ^{[1
]}

Kavasoglu, Nese ^{[1
]}

Oktik, Sener ^{[1
]}

机构：

[1] Mugla Univ, Fac Arts & Sci, Dept Phys, TR-48170 Kotekli, Mugla, Turkey

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 06期

关键词：

capacitance correction; device simulation; Nyquist plot; complex impedance; series resistance subtraction; built-in potential;

D O I：

10.1016/j.sse.2008.02.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impression of series resistance on unipolar semiconductor device's capacitance-voltage spectrum is discussed by conventional impedance and admittance analysis, and it is shown that series resistance may cause large errors in capacitance-voltage data. It is shown that the existence of such errors can be deduced from suitable complex impedance measurement obtained during the capacitance-voltage measurement process and this information can be used to correct the distorted capacitance values. A theoretical analysis and computer simulation are presented in order to illustrate the nature of the problem and the technique by which accurate depletion region capacitance can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：990 / 996

页数：7

共 10 条

[1] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[2]

Jonscher A., 1983, DIELECTRIC RELAXATIO

[3] Facility to measure solar cell ac parameters using an impedance spectroscopy technique [J].

Kumar, RA ;

Suresh, MS ;

Nagaraju, J .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2001, 72 (08) :3422-3426

[4] MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS (SIO2-SI E) [J].

NICOLLIAN, EH ;

GOETZBERGER, A .

APPLIED PHYSICS LETTERS, 1965, 7 (08) :216-+

[5] Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells-recent achievements, current understanding, and future challenges [J].

Rau, U ;

Schock, HW .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (02) :131-147

[6] EFFECTS OF SERIES RESISTANCE AND INDUCTANCE ON SOLAR-CELL ADMITTANCE MEASUREMENTS [J].

SCOFIELD, JH .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1995, 37 (02) :217-233

[7]

Sze S.M., 2013, SEMICONDUCTOR DEVICE

[8] SERIES RESISTANCE EFFECTS IN SEMICONDUCTOR CV PROFILING [J].

WILEY, JD ;

MILLER, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :265-272

[9] FREQUENCY-DEPENDENCE OF C AND DELTA-V-DELTA(C-2) OF SCHOTTKY BARRIERS CONTAINING DEEP IMPURITIES [J].

ZOHTA, Y .

SOLID-STATE ELECTRONICS, 1973, 16 (09) :1029-1035

[10]

HP4192 IMPEDANCE ANA

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