Magnetoresistance of a two-dimensional electron gas due to a single magnetic barrier and its use for nanomagnetometry

被引：198

作者：

Kubrak, V ^{[1
]}

Rahman, F

Gallagher, BL

Main, PC

Henini, M

Marrows, CH

Howson, MA

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Leeds, Dept Phys & Astron, Leeds LS9 2JT, W Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期

关键词：

D O I：

10.1063/1.123022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the longitudinal resistance of a semiconductor near-surface two-dimensional electron gas (2DEG) subjected to a magnetic barrier induced by the stray field from a single sub-micron ferromagnetic line on the surface of the device. The amplitude of the magnetic barrier is controlled by the application of an external magnetic field in the plane of the 2DEG. We show that this type of magnetoresistance can be used to deduce properties of the ferromagnetic line, so that our hybrid ferromagnet-semiconductor structure acts as a nanomagnetometer. (C) 1999 American Institute of Physics. [S0003-6951(99)02317-7].

引用

页码：2507 / 2509

页数：3

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