Optical properties of microcrystalline materials

被引:66
作者
Vanecek, M
Poruba, A
Remes, Z
Beck, N
Nesladek, M
机构
[1] Acad Sci Czech Republ, Inst Phys, CZ-16200 Praha 6, Czech Republic
[2] Univ Neuchatel, Inst Microtechnol, CH-2000 Neuchatel, Switzerland
[3] Limburgs Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium
关键词
microcrystalline silicon; thin films; diamonds;
D O I
10.1016/S0022-3093(98)00202-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We use optical, photocurrent and photothermal deflection spectroscopies to study defects in microcrystalline silicon (mu c-Si) thin films and diamond layers. Enhanced light absorption in mu c-Si films and solar cells is due to several contributions: light scattering, change in the optical transition probability for strained and surface atoms and residual amorphous fraction. Low defect density (optical absorption with a coefficient, alpha, smaller than 0.1 cm(-1) at about 0.8 eV, as measured by the constant photocurrent method), amorphous volume fraction below 10% and a distinct surface texture is typical for a material yielding a good efficiency mu c-Si solar cells. Main defects in heteroepitaxial chemical vapor deposition diamond films are discussed. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:967 / 972
页数:6
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