A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process

被引:74
作者
Chin, YL
Chou, JC [1 ]
Sun, TP
Chung, WY
Hsiung, SK
机构
[1] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Yunlin, Taiwan
[2] Chung Yuan Christian Univ, Inst Elect Engn, Chungli 320, Taiwan
[3] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan
来源
SENSORS AND ACTUATORS B-CHEMICAL | 2001年 / 76卷 / 1-3期
关键词
ion-sensitive field effect transistor (ISFET); pH sensor; p-n diode; DPDM; CMOS;
D O I
10.1016/S0925-4005(01)00639-6
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A monolithic chip processing method is reported, which includes the ion sensitive field effect transistor (ISFET) of the pH sensor, p-n diode of temperature sensor and readout circuit using 0.5 mum double poly double metal (DPDM) standard CMOS product with UMC IC foundry company. We have designed a planar diffused silicon diode on a n-channel pH sensitive ISFET sensor to act as a temperature sensor for on-chip temperature measurement and compensation. Furthermore, the device integrated the dual sensors and readout circuit has the potential advantages of achieving, both the pH and temperature value display, with this process, ISFET's temperature coefficient can be minimized. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:582 / 593
页数:12
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