Observations regarding a c(4x4)C-Si(100) surface

被引：27

作者：

Shek, ML ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Natl Synchrotron Light Source Dept, Upton, NY 11973 USA

来源：

SURFACE SCIENCE | 1998年 / 414卷 / 03期

关键词：

low-energy electron diffraction; semiconducting surfaces; silicon; single crystal surfaces; soft X-ray photoemission;

D O I：

10.1016/S0039-6028(98)00437-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present C 1s soft X-ray photoemission data for c(4 x 4) C-Si(100) surfaces observed in low-energy electron diffraction. These surfaces are prepared by either evaporation from graphite or ethylene exposure to Si(100) at 823-923 K. The c(4 x 4) structure is due to a "subsurface" C species, with a C 1s energy varying from about -283.1 to -282.7 eV and attaining the latter value in well-annealed samples. From the observed intensities and total coverage estimates, we qualitatively discuss the possibilities for a C-enriched near-surface layer as the origin of the reconstruction. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：353 / 362

页数：10

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