Dynamically tuning properties of epitaxial colossal magnetoresistance thin films

被引：61

作者：

Dale, D ^{[1
]}

Fleet, A

Brock, JD

Suzuki, Y

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 21期

关键词：

D O I：

10.1063/1.1578186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain state of epitaxial La0.5Sr0.5MnO3 thin films on BaTiO3 are dynamically tuned by temperature and substrate bias. The resistivity of the La0.5Sr0.5MnO3 thin films is particularly sensitive to changes in structure. Fractional changes in magnetization and resistivity as a function of temperature reveal a direct correlation with fractional changes in the structure, as measured by out-of-plane x-ray diffraction. Fractional changes in resistivity, as large as 30%, are observed for strain induced by the structural phase transitions of the BaTiO3 substrate, and a 12% change is induced by an inverse piezoelectric effect at room temperature. (C) 2003 American Institute of Physics.

引用

页码：3725 / 3727

页数：3

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