Band structure and optical response of 2H-MoX2 compounds (X=S, Se, and Te) -: art. no. 155114

被引:46
作者
Reshak, AH [1 ]
Auluck, S [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Roorkee 247667, Uttar Pradesh, India
来源
PHYSICAL REVIEW B | 2005年 / 71卷 / 15期
关键词
D O I
10.1103/PhysRevB.71.155114
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report calculations of the electronic and optical properties for the 2H-MoX2 (X=S,Se,Te) compounds using the full potential linear augmented plane wave method within the local density approximation. When S is replaced by Se and Te, the energy gap changes and the bandwidth of the Mo-d bands reduces. From the partial density of states we find a strong hybridization between Mo-d and X-p states below the Fermi energy E-F. On going from S to Se to Te the structures in the frequency-dependent imaginary part of the dielectric function epsilon(2)(omega) shifts towards lower energies. The frequency-dependent reflectivity and absorption show that the plasma minimum also shifts towards lower energies. We compare our calculations with the experimental optical data and find a good agreement.
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页数:6
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