Facile Synthesis of Pt-Functionalized SnO2 Hollow Hemispheres and Their Gas Sensing Properties

被引：30

作者：

Cho, Nam Gyu ^{[1
,3
]}

Whitfield, George C. ^{[2
]}

Yang, Dae Jin ^{[2
]}

Kim, Ho-Gi ^{[1
]}

Tuller, Harry L. ^{[2
]}

Kim, Il-Doo ^{[3
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] Korea Inst Sci & Technol, Optoelect Mat Ctr, Seoul 130650, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 12期

关键词：

CHEMICAL-MODIFICATION; OXIDE FILMS; THIN-FILMS; SENSORS; SURFACE; NANOSTRUCTURES; SENSITIVITY; XPS;

D O I：

10.1149/1.3489949

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This work presents a new route for enhancing the sensor response kinetics of macroporous SnO2 films. Well-ordered arrays of SnO2 hollow hemispheres, functionalized with catalytic Pt, were synthesized using colloidal templating and cosputtering, followed by subsequent heat-treatment. The diameter and shell thickness of the Pt-functionalized SnO2 hollow hemispheres were 800 and 25 nm, respectively. High resolution transmission electron microscopy analysis indicates that catalytic Pt nanoparticles, with size of a few nanometers, coat the top surface of SnO2 hemispheres, enabling chemical reactions to proceed at lower temperatures. Sensors composed of Pt-functionalized SnO2 hollow hemispheres show attractive gas sensing characteristics, such as reduced operation temperature (<= 250 degrees C) combined with improved sensitivity (R/R-o = 4.08 to 250 ppm H-2), reduced baseline resistance, and enhanced response/recovery properties compared to sensors using pristine SnO2 hollow hemispheres at an operating temperature of 250 degrees C. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489949] All rights reserved.

引用

页码：J435 / J439

页数：5

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