Abnormal temperature dependence of conductance of single Cd-doped ZnO nanowires

被引:31
作者
Li, QH
Wan, Q
Wang, YG
Wang, TH [2 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Hunan Univ, Micro Nano Technol Res Ctr, Changsha 410082, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.1954878
中图分类号
O59 [应用物理学];
学科分类号
摘要
Positive temperature coefficient of resistance is observed on single Cd-doped ZnO nanowires. The current along the nanowire increases linearly with the bias and saturates at large biases. The conductance is greatly enhanced either by ultraviolet illumination or infrared illumination. However, the conductance decreases with increasing temperature, in contrast to the reported temperature behavior either for ZnO nanostructures or for CdO nanoneedles. The increase of the conductance under illumination is related to surface effect and the decrease with increasing temperature to bulk effect. These results show that Cd doping does not change surface effect but affects bulk effect. Such a bulk effect could be used to realize on-chip temperature-independent varistors. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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