One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO2 films

被引：17

作者：

Chen, T. L. ^{[1
]}

Hirose, Y. ^{[1
]}

Hitosugi, T. ^{[1
,2
]}

Hasegawa, T. ^{[1
,2
]}

机构：

[1] KAST, Kawasaki, Kanagawa 2130012, Japan

[2] Univ Tokyo, Dept Chem, Tokyo 1130033, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 06期

关键词：

D O I：

10.1088/0022-3727/41/6/062005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a novel way to obtain heavily nitrogen doped anatase TiO2 films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of similar to 15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region.

引用

页数：4

共 19 条

[1]

Visible-light photocatalysis in nitrogen-doped titanium oxides [J].