Preparation, crystal structure and electrical properties of Cu4SnS6

被引：19

作者：

Chen, XA ^{[1
]}

Wada, H ^{[1
]}

Sato, A ^{[1
]}

机构：

[1] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 305, Japan

来源：

MATERIALS RESEARCH BULLETIN | 1999年 / 34卷 / 02期

基金：

日本科学技术振兴机构;

关键词：

chalcogenides; crystal structure; electrical properties;

D O I：

10.1016/S0025-5408(99)00013-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals of Cu4SnS6 were grown in an eutectic flux of 54% KCl and 46% LiCl. The X-ray crystal structure analysis showed that Cu4SnS6 crystallizes in a new layered structure with rhombohedral symmetry: R (3) over bar m, a = 3.739(1), c = 32.941(7) Angstrom, Z = 2, R = 0.037 for 188 reflections and 18 variables. The crystal structure comprises structural slabs of four sulfur layers. Three of those slabs are stacked rhombohedrally along the c axis and connected by S-S bonds to build the unit cell. 0.661(6) Sn and 0.326(6) Cu atoms are statistically distributed over the octahedral voids, with the Cu atoms moving toward two opposite triangular sulfur faces, and pest of the Cu atoms in Cu4SnS6 occupy the tetrahedral holes. The overall layer sequence is B alpha AcB beta A\A gamma CbA alpha C\C beta BaC gamma B. Electrical conductivity measurements indicate that Cu4SnS6 might be metallic. (C) 1999 Elsevier Science Ltd.

引用

页码：239 / 247

页数：9

共 27 条

[1] COMPLETION AND REFINEMENT OF CRYSTAL-STRUCTURES WITH SIR92 [J].