First-principles calculations of the dielectric properties of silicon nanostructures

被引：23

作者：

Hamel, S. ^{[1
]}

Williamson, A. J. ^{[1
]}

Wilson, H. F. ^{[2
]}

Gygi, F. ^{[2
]}

Galli, G. ^{[2
]}

Ratner, E. ^{[3
]}

Wack, D. ^{[3
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[2] Univ Calif Davis, Davis, CA 95616 USA

[3] Kla Tencor Corp, San Jose, CA 95134 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.2839332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the static dielectric properties of silicon rods and slabs below 10 nm, in the long wavelength limit, by using first-principles density functional theory calculations. Surface structure is found to be the most important factor affecting the changes of the dielectric response at the nanoscale, compared to that of bulk Si, with significant differences observed between slabs and finite rods of similar lateral dimensions. (C) 2008 American Institute of Physics.

引用

页数：3

共 15 条

[1]

BUNDAY BD, 2005, P SOC PHOTO-OPT INS, V304, P5752

[2] Concept of dielectric constant for nanosized systems [J].