Interpretation of the angular dependence of the de Haas-van Alphen effect in MgB2 -: art. no. 174505

被引：9

作者：

Carrington, A

Fletcher, JD

Harima, H

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Kobe Univ, Dept Phys, Kobe, Hyogo 6578501, Japan

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.71.174505

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present detailed results for the amplitude and field dependence of the de Haas-van Alphen (dHvA) signal arising from the electronlike pi sheet of Fermi surface in MgB2. Our data and analysis show that the dip in dHvA amplitude when the field is close to the basal plane is caused by a beat between two very similar dHvA frequencies and not a spin-zero effect as previously assumed. Our results imply that the Stoner enhancement factors in Mgb(2) are small on both the sigma and pi sheets.

引用

页数：4

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