Temperature effect on carrier transport characteristics in SrTiO3-δ/Si p-n heterojunction -: art. no. 123502

被引：31

作者：

Guo, HZ ^{[1
]}

Huang, YH ^{[1
]}

Jin, KJ ^{[1
]}

Zhou, QL ^{[1
]}

Lu, HB ^{[1
]}

Liu, LF ^{[1
]}

Zhou, YL ^{[1
]}

Cheng, BL ^{[1
]}

Chen, ZH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 10008, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 12期

关键词：

D O I：

10.1063/1.1888039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A p-n junction has been fabricated by depositing an electron-doped (n-) SrTiO3-delta film on a hole-doped (p-) Si substrate with a two atomic-layers thickness epitaxial SrO buffer layer using laser molecular beam epitaxy technique. Good crystallinity and smooth surface of SrTiO3-delta were confirmed by reflection high-energy electron diffraction and x-ray diffraction. The junction shows good rectifying behavior at room temperature, and strong temperature dependence of current-voltage (I-V) properties in the range of 200-300 K. These results present potential applications in future microelectronic devices based on growing perovskite oxide thin films on conventional semiconductors. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

相关论文

共 17 条

[1] OBSERVATION OF A MIDINFRARED BAND IN SRTIO3-Y [J].

CALVANI, P ;

CAPIZZI, M ;

DONATO, F ;

LUPI, S ;

MASELLI, P ;

PESCHIAROLI, D .

PHYSICAL REVIEW B, 1993, 47 (14) :8917-8922

[2] Optical properties of highly reduced SrTiO3-x [J].

Crandles, DA ;

Nicholas, B ;

Dreher, C ;

Homes, CC ;

McConnell, AW ;

Clayman, BP ;

Gong, WH ;

Greedan, JE .

PHYSICAL REVIEW B, 1999, 59 (20) :12842-12846

[3] Study of the electronic conduction mechanism in Nb-doped SrTiO3 thin films with Ir and Pt electrodes [J].

Gopalan, S ;

Balu, V ;

Lee, JH ;

Hee-Han, J ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2000, 77 (10) :1526-1528

[4] Pulsed laser deposition of superconducting Nb-doped strontium titanate thin films [J].

Leitner, A ;

Rogers, CT ;

Price, JC ;

Rudman, DA ;

Herman, DR .

APPLIED PHYSICS LETTERS, 1998, 72 (23) :3065-3067

[5] TEMPERATURE-DEPENDENT SURFACE-STRUCTURE, COMPOSITION, AND ELECTRONIC PROPERTIES OF CLEAN SRTIO3(111) CRYSTAL-FACE - LOW-ENERGY-ELECTRON DIFFRACTION, AUGER-ELECTRON SPECTROSCOPY, ELECTRON-ENERGY LOSS, AND ULTRAVIOLET-PHOTOELECTRON SPECTROSCOPY STUDIES [J].

LO, WJ ;

SOMORJAI, GA .

PHYSICAL REVIEW B, 1978, 17 (12) :4942-4950

[6]

Lü HB, 2003, CHINESE PHYS LETT, V20, P137, DOI 10.1088/0256-307X/20/1/341

[7] ENERGY-BANDS FOR KNIF3, SRTIO3, KMOO3, AND KTAO3 [J].

MATTHEISS, LF .

PHYSICAL REVIEW B, 1972, 6 (12) :4718-4740

[8] Crystalline oxides on silicon: The first five monolayers [J].

McKee, RA ;

Walker, FJ ;

Chisholm, MF .

PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3014-3017

[9] Observation of minority spin character of the new electron doped manganite La0.7Ce0.3MnO3 from tunneling magnetoresistance -: art. no. 017202 [J].

Mitra, C ;

Raychaudhuri, P ;

Dörr, K ;

Müller, KH ;

Schultz, L ;

Oppeneer, PM ;

Wirth, S .

PHYSICAL REVIEW LETTERS, 2003, 90 (01) :4

[10] Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy [J].

Ramdani, J ;

Droopad, R ;

Yu, Z ;

Curless, JA ;

Overgaard, CD ;

Finder, J ;

Eisenbeiser, K ;

Hallmark, JA ;

Ooms, WJ ;

Kaushik, V ;

Alluri, P ;

Pietambaram, S .

APPLIED SURFACE SCIENCE, 2000, 159 :127-133