Deposition of uniform Zr-Sn-Ti-O films by on-axis reactive sputtering

被引:30
作者
van Dover, RB [1 ]
Schneemeyer, LF [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1109/55.709630
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe the deposition of amorphous Zr-Sn-Ti-O (aZTT) dielectric thin films using conventional on-axis reactive sputtering. Thin films of composition Zr0.2Sn0.2Ti0.6O2 have excellent dielectric properties: 40-50-nm thick films with a dielectric constant of 50-70 were obtained, depending on the;processing conditions, yielding a specific capacitance of 9-17 fF/mu m(2) Breakdown fields were measured to be 3-5 MV/cm, yielding a figure of merit epsilon epsilon(0)E(br) = 15-30 mu C/cm(2), up to eightfold higher than conventional deposited SiO2. Leakage currents, measured at 1.0 MV/cm, were in the range 10(-9)-10(-7) A/cm(2). This material appears well-suited for use in Si-IC device technology, for example as storage capacitors in DRAM.
引用
收藏
页码:329 / 331
页数:3
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