We describe the deposition of amorphous Zr-Sn-Ti-O (aZTT) dielectric thin films using conventional on-axis reactive sputtering. Thin films of composition Zr0.2Sn0.2Ti0.6O2 have excellent dielectric properties: 40-50-nm thick films with a dielectric constant of 50-70 were obtained, depending on the;processing conditions, yielding a specific capacitance of 9-17 fF/mu m(2) Breakdown fields were measured to be 3-5 MV/cm, yielding a figure of merit epsilon epsilon(0)E(br) = 15-30 mu C/cm(2), up to eightfold higher than conventional deposited SiO2. Leakage currents, measured at 1.0 MV/cm, were in the range 10(-9)-10(-7) A/cm(2). This material appears well-suited for use in Si-IC device technology, for example as storage capacitors in DRAM.