Early stages of interface formation of C60 on GaAs(100)

被引：9

作者：

Brambilla, A. ^{[1
]}

Sessi, P. ^{[1
]}

Duo, L. ^{[1
]}

Finazzi, M. ^{[1
]}

Cabanillas-Gonzalez, J. ^{[1
]}

Egelhaaf, H.-J. ^{[1
]}

Lanzani, G. ^{[1
]}

Ciccacci, F. ^{[1
]}

机构：

[1] Politecn Milan, Dept Fis, I-20133 Milan, Italy

来源：

SURFACE SCIENCE | 2007年 / 601卷 / 18期

关键词：

fullerene; gallium arsenide; semiconductor surfaces and interfaces; PHOTOEMISSION; FULLERENES; ADSORPTION; GROWTH; FILMS; GAP;

D O I：

10.1016/j.susc.2007.04.062

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a detailed investigation of the electronic properties of C-60 grown on GaAs(1 0 0) substrates, as a function of the fullerene coverage, from the very early stages of interface formation up to the development of a bulk-like fullerene film. We monitor the chemical interactions and the energy levels alignment by means of X-rays, ultraviolet and inverse photoemission spectroscopies. The two latter techniques allow to investigate the electronic structure close to the Fermi level. Energy levels alignment at the interfaces of C-60 with p-doped and GaAs(1 0 0) are obtained and discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：4078 / 4081

页数：4

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