Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission

被引:11
作者
Felnhofer, D [1 ]
Gusev, EP
Jamison, P
Buchanan, DA
机构
[1] Univ Manitoba, Winnipeg, MB, Canada
[2] IBM Corp, TJ Watson Res Ctr, Semicond Res & Dev Ctr, Div Res, Yorktown Hts, NY USA
关键词
high-kappa; oxide charge trapping; internal photoemission; charge centroid; photocurrent;
D O I
10.1016/j.mee.2005.04.044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The focus of this paper is charge trapping within HfO2 high-kappa metal-oxide-semiconductor capacitors. Charge was injected by constant voltage stress and internal photoemission. Capacitance-voltage and photocurrent-voltage measurements were taken in order to determine the centroid of oxide charge within the high-kappa gate stack. Shifts in photocurrent response of the Al/HfO2/SiO2/p-type Si capacitors place the centroid within the HfO2 dielectric, near the Al gate. Large flatband voltage and photocurrent shifts were measured which indicates a large density of traps within these films. Measurements and observations support the result that it is the bulk traps within the HfO2 which contribute to charge trapping.
引用
收藏
页码:58 / 61
页数:4
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