Giant magnetoresistance of dual spin-valves using antiferromagnetic α-Fe2O3 as a pinning layer

被引：22

作者：

Sugita, Y ^{[1
]}

Kawawake, Y ^{[1
]}

Satomi, N ^{[1
]}

Sakakima, H ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Cent Res Labs, Seika, Kyoto 6190237, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 11期

关键词：

giant magnetoresistance; antiferromagnetic film; alpha-Fe2O3; dual spin-valve; specular reflection;

D O I：

10.1143/JJAP.37.5984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the large magnetoresitance (MR) ratio of a dual spin-valve structure in alpha-Fe2O3(50 nm)/Co/Cu/Co/Cu/Co/alpha-Fe2O3 (50 nm) films using the insulating antiferromagnetic alpha-Fe2O3 as a pinning layer. The MR ratio of a dual spin-valve is obtained as 27.8%, the highest value ever reported. This large MR ratio may indicate that the specular reflection of the conduction elections occurs at the metal/insulator (Co/alpha-Fe2O3) interfaces.

引用

页码：5984 / 5985

页数：2

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