New approach to isotropic texturing techniques on multicrystalline silicon wafers

被引:11
作者
Park, SW [1 ]
Kim, DS [1 ]
Lee, SH [1 ]
机构
[1] Samsung SDI Co Ltd, Ctr Corp Res & Dev, Natl Res Lab Si Photovoltaics, Suwon 440600, South Korea
关键词
This work was supported by the Korean Ministry of Commerce; Industry; and Energy under G7 Project and the Korean Ministry of Science Technology under National Research Laboratory Project;
D O I
10.1023/A:1012824115191
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multicrystalline silicon wafers were isotropically textured using two kinds of modified acid texturing methods. One of the modifications is based on the introduction of the spray deposition method into the conventional acid etching of Si wafers. Silicon dioxide or photo-resist was sprayed on the Si wafers and used as masks for following acid etching process. The acid etching solution was modified with H2SO4 and various additives. Short circuit densities of the solar cells fabricated using those modified acid texturing were measured to be in the range between 30.8 and 31.4mA/cm(2), which were at least 1.6mA/cm(2) higher than those from alkaline textured solar cells. (C) 2001 Kluwer Academic Publishers.
引用
收藏
页码:619 / 622
页数:4
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