Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method

被引：76

作者：

Hu, GD ^{[1
]}

Wilson, IH

Xu, JB

Cheung, WY

Wong, SP

Wong, HK

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, NT, Peoples R China

[2] Chinese Univ Hong Kong, Mat Sci & Technol Res Ctr, Shatin, NT, Peoples R China

[3] Chinese Univ Hong Kong, Dept Phys, Shatin, NT, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared by metalorganic decomposition on Pt/Ti/SiO2/Si substrates at annealing temperatures ranging from 600 to 750 degrees C. The SBT thin films were annealed layer by layer during the spin-coating process using a rapid thermal annealing (RTA) furnace. The relative intensity of (200) peak in x-ray diffraction increased with the increase of the annealing temperature. A (200)-predominant film can be formed at 700 and 750 degrees C. For the film annealed by RTA furnace at 650 degrees C, the remanent polarization (2P(r)) and coercive field (2E(c)) were 19.8 mu C/cm(2) and 116 kV/cm, respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)00309-5].

引用

页码：1221 / 1223

页数：3

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