Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

被引：210

作者：

Sakai, A

Sunakawa, H

Usui, A

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 04期

关键词：

D O I：

10.1063/1.121907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated by transmission electron microscopy (TEM) defect morphology and structure in GaN films formed using an epitaxial lateral overgrowth (ELO) technique on SiO2-mask/window-stripe-patterned GaN layers in hydride vapor-phase epitaxy. In this experiment, the regions overgrown on the SiO2 masks were thoroughly examined. Cross-sectional TEM clearly revealed characteristic defects along the [0001] direction in the overgrown region, which consisted of arrays of dislocations running along the mask stripe direction. These defects caused crystallographic tilting in that region near the mask with respect to the other region grown from the window area. We also observed, at the coalesced site on the mask, vertical repropagation of dislocations that had propagated laterally during ELO. The origin of the observed defects and their influence on the residual dislocation distribution near the fi:im surface are discussed. (C) 1998 American Institute of Physics.

引用

页码：481 / 483

页数：3

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