Chemical vapor deposition of ruthenium dioxide thin films from bis(2,4-dimethylpentadienyl)ruthenium

被引：10

作者：

Meda, L ^{[1
]}

Breitkopf, RC ^{[1
]}

Haas, TE ^{[1
]}

Kirss, RU ^{[1
]}

机构：

[1] Northeastern Univ, Dept Chem, Boston, MA 02115 USA

来源：

CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING | 1998年 / 495卷

关键词：

D O I：

10.1557/PROC-495-75

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Thin films of polycrystalline RuO2 were deposited from bis(2, 4-dimethylpentadienyl) ruthenium, (eta(5)-2, 4-Me2C5H5)(2)Ru (1) and ruthenocene (2) on quartz and silicon substrates between 200 and 500 degrees C under Ar/O-2 or O-2. Films deposited from 1 were more adherent than those grown from 2 under the same conditions, however, none of the films were particularly adherent when O-2 was used as a carrier gas. SEM revealed a columnar structure for both precursors with grain size ranging from 0.15 - 1 5 mu. Crystallinity increased after annealing the films to 800 degrees C. Resistivity decreased as the annealing temperature increased.

引用

页码：75 / 80

页数：6