Nickel ohmic contacts to p- and n-type 4H-SiC

被引：36

作者：

Fursin, LG ^{[1
]}

Zhao, JH

Weiner, M

机构：

[1] Rutgers State Univ, Sch Engn, ECE Dept, SiCLAB, Piscataway, NJ 08854 USA

[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 17期

关键词：

Annealing - Electric potential - Electric resistance - Nickel - Semiconductor doping - Silicon carbide;

D O I：

10.1049/el:20010738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first demonstration of Ni ohmic contacts to both p(-) and n(-) 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10 (4) Omega cm(2) and 10 (6) Omega cm(2) for p(+) and n(+) 4H-SiC, respectively, have been determined by the transfer length method.

引用

页码：1092 / 1093

页数：2